37C 43 ghz ampli?er technical data HMMC-5034 features ? 23 dbm output p (-1db) ? 8 db gain @ 40 ghz ? integrated output power detector network ? 50 w input/output matching ? bias: 4.5 volts, 300 ma description the HMMC-5034 is a mmic power amplifier designed for use in wireless transmitters that operate within the 37 ghz to 42.5 ghz range. at 40 ghz it provides 23 dbm of output power [p (-1db) ] and 8 db of small-signal gain from a small easy-to-use device. the HMMC-5034 was designed to be driven by the hmmc-5040 mmic amplifier for linear transmit applications. this device has input and output matching circuitry for use in 50 ohm environments. chip size: 1.56 x 1.02 mm (61.4 x 40.1 mils) chip size tolerance: 10 m m ( 0.4 mils) chip thickness: 127 15 m m (5.0 0.6 mils) absolute maximum ratings [1] symbol parameters/conditions units min. max. v d1,2 drain supply voltages volts 5 v g1,2 gate supply voltages volts -3.0 0.5 i d1 input-stage drain current ma 165 i d2 output-stage drain current ma 285 p in rf input power dbm 23 t ch channel temperature [2] c 175 t bs backside temperature c -55 +95 t st storage temperature c -65 +170 t max max. assembly temperature c 300 notes: 1. absolute maximum ratings for continuous operation unless otherwise noted. 2. refer to dc specifications/physical properties table for derating information.
2 HMMC-5034 dc specifications/physical properties [1] symbol parameters/conditions units min. typ. max. v d1,2 drain supply operating voltages volts 2 4.5 5 suggested first stage operating drain supply current ma 100 165 i d1 (v d1 = 4.5 v) suggested second stage operating drain supply ma 200 285 i d2 current (v d2 = 4.5 v) v g1,2 gate supply operating voltages volts -0.8 (i d1 = 100 ma, i d2 = 200 ma) v p pinch-off voltage (v d1 = v d2 = 4.5 v, i d1 + i d2 10 ma) volts -2.5 -1.2 vdet reference and output detector dc voltage volts 1.4 (v d2 = 4.5 v, no rf output) g detector voltage sensitivity (v dd = 4.5 v, p out = 20 dbm) mv/mw 0.12 q ch-bs thermal resistance [2] (channel-to-backside at t ch = 150 c) c/watt 44 t ch channel temperature [3] , (t bs = 90 c, mttf > 10 6 hrs, c 150 (v d1 = v d2 = 4.5 v, i d1 = 100 ma, i d2 = 200 ma) notes: 1. backside operating temperature t bs = 25 c unless otherwise noted. 2. thermal resistance ( c/watt) at a channel temperature t( c) can be estimated using the equation: q (t) = q ch-bs x [t( c) + 273] / [150 c + 273]. 3. derate mttf by a factor of two for every 8 c above t ch . ~ ~ ~ HMMC-5034 rf specifications, t a = 25 c, z o = 50 w , v d1 = v d2 = 4.5 v, i d1 = 100 ma, i d2 = 200 ma 37C 40 ghz 40 C 42.5 ghz symbol parameters and test conditions units min. typ. max. min. typ. max. bw operating bandwidth ghz 37 40 40 42.5 gain small signal gain db 7 8 11 6 7 11 d gain/ d t temperature coefficient of gain db/ c 0.019 0.019 p (-1db) output power @ 1 db gain compression [1] dbm 21 23 20 22 p sat saturated output power dbm 22 24 21 23 d p/ d t temperature coefficient of p (-1db) and p sat db/ c 0.015 0.015 (rl in ) min minimum input return loss db 9 10 8 10 (rl out ) min minimum output return loss db 10 12 9 12 isolation minimum reverse isolation db 30 27 note: 1. devices operating continuously at or beyond 1 db gain compression may experience power degradation.
3 figure 1. HMMC-5034 simplified schematic diagram. v d1 v d2 det. out (optional) v g2 (optional) v g1 v d1 (optional) v d2 (optional) det. ref v g1 v g2 stage 1 stage 2 c rf input rf output r1 r1 d1 d2 applications the HMMC-5034 mmic is a broadband power amplifier designed for use in communica- tions transmitters that operate in various frequency bands within 37 ghz and 42.5 ghz. it can be attached to the output of the hmmc-5040 increasing the power handling capability of transmit- ters requiring linear operation. biasing and operation the recommended dc bias condition is with both drains ( v d1 and v d2 ) connected to single 4.5 volt supply ( v dd ) and both gates ( v g1 and v g2 ) connected to an adjustable negative voltage supply ( v gg ) as shown in figures 12 or 13. the gate voltage is adjusted for a total drain supply current of commonly 300 ma or less. the rf input and output ports are ac-coupled. an output power detector net- work is also supplied. the det.out port provides a dc voltage that is generated by the rf power at the rf-output port. the det.ref pad provides a dc reference voltage that can be used to nullify the effects of temperature variations on the detected rf voltage. the differen- tial voltage between the det.ref and det.out bonding pads can be correlated to the rf power emerging from the rf-output port. a bond wire attaching both v d2 bond pads to the supply will assure symmetric operation and minimize any dc offset voltage between det.ref and det.out (at no rf output power). no ground wires are needed be- cause ground connections are made with plated through-holes to the backside of the device. assembly techniques electrically and thermally con- ductive epoxy die attach is the preferred assembly method. solder die attach using a fluxless gold-tin (ausn) solder pre-form can also be used. the device should be attached to an electri- cally conductive surface to complete the dc and rf ground paths. the backside metallization on the device is gold. it is recommended that the electrical connections to the bonding pads be made using 0.7- 1.0 mil diameter gold wire. the microwave/millimeter-wave connections should be kept as short as possible to minimize inductance. for assemblies requiring long bond wires, multiple wires can be attached to the rf bonding pads. thermosonic wedge is the preferred method for wire bonding to the gold bond pads. a guided-wedge at an ultrasonic power level of 64 db can be used for the 0.7 mil wire. the recom- mended wire bond stage tempera- ture is 150 2 c. for more detailed information see agilent application note #999, gaas mmic assembly and handling guidelines. gaas mmics are esd sensitive. proper precautions should be used when handling these devices.
4 figure 3. input and output return loss vs. frequency. [1] input and output return loss (db) frequency (ghz) v dd = 4.5 v, i dd = 300 ma 0 5 10 15 20 50 30 40 35 45 output spec range 37 ?42.5 ghz input figure 6. p -1db vs. total drain current as a function of frequency. [1] p -1db (dbm) i dd (ma) v dd = 4.5 v 26 24 22 20 18 16 350 150 250 200 300 37 ghz 40 ghz 42.5 ghz 43.5 ghz figure 7. p sat vs. total drain current as a function of frequency. [1] p sat (dbm) i dd (ma) v dd = 4.5 v 26 24 22 20 18 16 350 150 250 200 300 37 ghz 40 ghz 42.5 ghz 43.5 ghz figure 2. typical gain and isolation vs. frequency. [1] small-signal gain (db) reverse isolation (db) frequency (ghz) v dd = 4.5 v, i dd = 300 ma 10 8 6 4 2 0 -2 -4 -6 -8 -10 0 10 20 30 40 50 50 30 40 35 45 spec range 37 ?42.5 ghz gain isolation figure 4. gain vs. total drain current as a function of frequency. [1] gain (db) i dd (ma) v dd = 4.5 v 12 10 8 6 4 2 0 350 150 250 200 300 37 ghz 40 ghz 42.5 ghz 43.5 ghz figure 5. intermodulation distortion for 150 ma and 300 ma total drain current. (10 mhz spacing) power (dbm) p in (dbm) v dd = 4.5 v, f = 38 ghz 40 20 0 -20 -40 14 26 4 8 10 12 p out single-tone toi im3 150 ma 300 ma note 1 : wafer-probed measurements
5 figure 8. p -1db vs. frequency as a function of temperature. [1] p -1db (dbm) frequency (ghz) v dd = 4.5 v, i dd = 300 ma 26 24 22 20 18 16 44 37 39 38 42 40 41 43 10 c 50 c 90 c figure 9. p sat vs. frequency as a function of temperature. [1] p sat (dbm) frequency (ghz) v dd = 4.5 v, i dd = 300 ma 26 24 22 20 18 16 44 37 39 38 42 40 41 43 10 c 50 c 90 c figure 10. gain vs. frequency as a function of temperature. [1] gain (db) frequency (ghz) v dd = 4.5 v, i dd = 300 ma 12 10 8 6 4 2 0 44 37 39 38 42 40 41 43 10 c 50 c 90 c 950 70 510 rf input rf output 1020 70 v g1 0,0 670 v g2 1490 v d1 370 v d2 970 1560 opt. v g1 opt. v d1 opt. v d2 opt. v g2 figure 11. HMMC-5034 bonding pad positions. (dimensions are in micrometers) note 1 : wafer-probed measurements
this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpreted as a complete list of circuit specifica- tions. in this data sheet the term typical refers to the 50th percentile performance. for additional information contact your local agilent sales representative. rf input rf output v g1 v g2 v d1 to v dd supply (with low f bypassing) to v gg supply (with low f bypassing) v d2 3 100 pf chip capacitor 3 100 pf chip capacitor figure 12. HMMC-5034 common assembly diagram. (shown with/out optional output detector connections) rf input rf output optional det. ref (independent of rf power level) det. out v g1 v g2 v d2 v d1 to v dd supply (with low f bypassing) to v gg supply (with low f bypassing) v d2 3 100 pf chip capacitor 3 100 pf chip capacitor figure 13. HMMC-5034 common assembly diagram with detector. (shown with output detector connections and optional v d2 ?alancing?connection) 3 100 pf chip capacitor www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5968-4224e (11/99)
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